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TPCA8009-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS)
TPCA8009-H
High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
6.00.3
Unit: mm
0.50.1 1.27 8 0.40.1 5 0.05 M A
5.00.2
* * * * * * *
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| = 4.5S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.150.05
1 0.950.05
4
0.595 A
5.00.2
S 1 4
4.250.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 150 150 20 7 14 45 2.8
Unit
8
V V V A W W
1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN
5 0.80.1
JEDEC JEITA TOSHIBA
2-5Q1A
Pulsed (Note 1) (Tc=25) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.068 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
1.6
W
Circuit Configuration
8 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) Channel temperature Storage temperature range
34 7 1.5 150 -55 to 150
mJ A mJ C C
EAR Tch Tstg
1
2
3
3.50.2
Absolute Maximum Ratings (Ta = 25C)
0.60.1
1.10.2
0.05 S
0.1660.05
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCA8009-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8009-H
* Type Lot No.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25C (initial), L = 1mH, RG = 25 , IAR = 7 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCA8009-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Symbol IGSS IDSS V (BR) DSS Drain-source breakdown voltage V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rise time Turn-ON time Switching time Fall time tf toff Qg Qgs Qgd Qsw VDD 120 V, VGS = 10 V, - ID = 7 A tr ton 4.7 VGS 10 V 0V ID = 3.5 A VOUT RL = 21 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -5 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 3.5 A Min 150 150 100 2.0 2.1 Typ. 0.23 4.5 600 20 220 8 17 13 Max 10 100 4.0 0.35 ns pF V S V Unit A A
Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge Gate switch charge
VDD 75 V - < 1%, tw = 10 s Duty =
70 10 7.6 2.4 3.7
nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 7 A, VGS = 0 V Min Typ. Max 14 -2.0 Unit A V
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TPCA8009-H
ID - VDS
10 Common source Ta = 25C Pulse test 20 10 8 16 7 6 Common source Ta = 25C Pulse test 10
ID - VDS
8 7
8
(A)
(A)
ID
ID
5.5 6
6.5 12 6 8
Drain current
4
5
Drain current
5.5
2
4.5 VGS = 4 V
4
5 VGS = 4.5 V
0 0 1 2 3 4 5
0
0
4
8
12
16
20
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
20 Common source VDS = 10 V Pulse test 5
VDS - VGS
Common source Ta = 25C Pulse test
16
(V) VDS Drain-source voltage
4
ID
(A)
12
3
Drain current
8
25
2
ID = 7 A 3.5 1.7
4
100 Ta = -55C
1
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID (S)
100 Common source VDS = 10 V Pulse test 10000 Common source Ta = 25C VGS = 10 V Pulse test 1000
RDS (ON) - ID
|Yfs|
Forward transfer admittance
10
Ta = -55C
1
100
25
Drain-source ON-resistance RDS (ON) (m)
10 100
100
0.1
0.1
1
10 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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TPCA8009-H
RDS (ON) - Ta
800 Common source VGS = 10 V 100 Common source Ta = 25C Pulse test
IDR - VDS
Drain-source ON-resistance RDS (ON) (m)
Pulse test 600
IDR
3.5 ID = 7A 1.7
(A)
10
400
Drain reverse current
1
10
200
5
3 1 VGS = 0 V -0.8 -1.2
0 -80
-40
0
40
80
120
160
0.1
0
-0.4
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
1000 4
Vth - Ta
Ciss
Vth (V) Gate threshold voltage
(pF)
3
100 Coss
Capacitance
C
2
10 Common source VGS = 0 V f = 1 MHz Ta = 25C 1 10
1
Crss
1 0.1
100
0 -80
Common source VDS = 10 V ID = 1mA Pulse test -40 0 40 80 120 160
Drain-source voltage
VDS
(V)
Ambient temperature
Ta
(C)
Dynamic input/output characteristics
200 Common source ID = 7 A Ta = 25C Pulse test 30V 16
(V)
VDS
150
12
Drain-source voltage
VDS 100 60V
VDD = 120V 8
50
4
0 0 5 10 15
0
Total gate charge
Qg
(nC)
Gate-source voltage
VGS
VGS
(V)
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TPCA8009-H
rth - tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25 100 (1) (2)
Transient thermal impedance rth (C/W)
10 (3)
1
0.1 0.001
Single pulse 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
PD - Ta
3 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s 60
PD - Tc
(W)
2.5
PD
Drain power dissipation
(2) 1.5
1
Drain power dissipation
160
2
PD
40 20 0
0.5
0 0
40
80
120
(W)
0
40
80
120
160
Ambient temperature
Ta
(C)
Case temperature
Tc
(C)
Safe operating area
100
(A)
ID max (Pulse) * 10 ID max(Continuous) DC Operation Tc = 25C 1 *Single - pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1 10 t =1 ms * 10 ms *
Drain current
ID
0.1
VDSS max 100 1000
Drain-source voltage
VDS
(V)
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TPCA8009-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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